Datasheet > 晶体管 > 小信号场效应晶体管> 2N5639RLRAG

2N5639RLRAG

更新时间： 2024-11-22 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		斩波器开关小信号场效应晶体管
页数	文件大小	规格书
3页	52K
描述
JFET 斩波器晶体管

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中文翻译

获取价格

数据手册

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2N5639RLRAG 数据手册

2N5638, 2N5639

2N5638 is a Preferred Device

JFET Chopper Transistors

N−Channel − Depletion

N−Channel Junction Field Effect Transistors, depletion mode

(Type A) designed for chopper and high−speed switching applications.

Features

http://onsemi.com

• Low Drain−Source “ON” Resistance: RDS(on) = 30W for 2N5638

RDS(on) = 60W for 2N5639

1 DRAIN

• Low Reverse Transfer Capacitance −

rss

= 4.0 pF (Max) @ f = 1.0 MHz

• Fast Switching Characteristics − t = 5.0 ns (Max) (2N5638)

GATE

• Pb−Free Packages are Available*

MAXIMUM RATINGS

2 SOURCE

Rating

Drain−Source Voltage

Drain−Gate Voltage

Symbol

Value

Unit

Vdc

MARKING

DIAGRAM

Vdc

Reverse Gate−Source Voltage

Forward Gate Current

Total Device Dissipation

Vdc

GSR

mAdc

563x

AYWW G

TO−92

CASE 29

STYLE 5

@ T = 25°C

310

2.82

mW/°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temp Range

−65 to +150

−65 to +135

°C

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

x = 8 or 9

= Assembly Location

= Year

WW = Work Week

= 10 Vdc

= Pb−Free Package

(

)

) 50

DS(on)

(Note: Microdot may be in either location)

* R

0.1 mF

50 W

SCOPE B

ORDERING INFORMATION

PULSE

GENERATOR

−

†

Device

Package

Shipping

0.001 mF

INPUT

2N5638RLRA

TO−92

2000/Tape & Reel

(SCOPE A)

10%

90%

GS(on)

2N5638RLRAG

TO−92

(Pb−Free)

50 W

GS(off)

2N5639

TO−92

1000 Units/Box

d(on)

2N5639G

TO−92

(Pb−Free)

1.0 k

50 W

SCOPE A

d(off)

90%

10%

2N5369RLRA

TO−92

2000/Tape & Reel

2N5369RLRAG

TO−92

(Pb−Free)

OUTPUT

(SCOPE B)

SCOPE

TEKTRONIX 567A

OR EQUIVALENT

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Figure 1. Switching Times Test Circuit

Preferred devices are recommended choices for future use

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

and best overall value.

Publication Order Number:

March, 2006 − Rev. 4

2N5638/D

12 3

中文翻译

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与2N5639RLRAG相关器件

型号	品牌	获取价格	描述	数据表
2N5639RLRE	MOTOROLA	获取价格	30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2N5639R-STYLE-A	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
2N5639R-STYLE-F	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
2N5639R-STYLE-H	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
2N5639-STYLE-H	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A
2N5639TR3	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO
2N5640	INTERSIL	获取价格	N-CHANNEL JFET
2N5640-5	MOTOROLA	获取价格	30V, N-CHANNEL, Si, SMALL SIGNAL, JFET
2N5640D26Z	TI	获取价格	N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2N5640D27Z	TI	获取价格	N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92

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