Datasheet > 2N5550

2N5550

更新时间： 2024-09-13 07:28:51

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	126K
描述
NPN Plastic Encapsulated Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N5550 数据手册

2N5550

0.6 A, 160 V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

ꢀ

Switching and amplification in high voltage

TO-92

Applications such as telephony

Low current(max.600mA)

High voltage(max.160V)

Millimeter

REF.

Min.

Max.

4.70

4.40

4.30

12.70

3.30

0.36

Collector

3.81

0.56

0.51

1.27 TYP.

1.10

2.42

0.36

Base

2.66

0.76

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

Collector to Base Voltage

SYMBOL

V_CBO

RATING

UNIT

160

Collector to Emitter Voltage

Emitter to Base Voltage

V_CEO

140

V_EBO

0.6

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

I_C

P_C

0.625

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

PARAMETER

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

SYMBOL MIN

TYP

MAX UNIT

TEST CONDITION

I_C=100µA, I_E= 0A

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

160

140

I_C=1mA, I_B= 0A

I_E=10µA, I_C= 0A

0.1

0.05

µA

V_CB=100V, I_E= 0 A

V_EB=4 V, I_C=0 mA

V_CE=5V, I_C=1mA

Emitter Cut-Off Current

I_EBO

h_FE1

DC Current Gain

h_FE2

250

V_CE=5V, I_C=10mA

V_CE=5V, I_C=50mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

V_CB= 10V, I_E= 0A, f=1MHz

h_FE3

0.15

0.25

Collector to Emitter Saturation Voltage

Base to Emitter Voltage

V_CE(sat)

V_BE(sat)

1.2

Collector Output Capacitance

Transition Frequency

C_ob

f_T

100

300

MHz V_CE= 10V, I_C= 10mA, f=100MHz

V_CE=5V, I_C= 0.25mA,

Noise Figure

f=1KHz, R_S=1kΩ

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

8-Mar-2010 Rev. A

Page 1 of 2

中文翻译

下载PDF

与2N5550相关器件

型号	品牌	获取价格	描述	数据表
2N5550/D	MOTOROLA	获取价格	Amplifier Transistor NPN
2N5550/D11Z	TI	获取价格	600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5550/D27Z	TI	获取价格	600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5550/D29Z	TI	获取价格	600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5550/D74Z	TI	获取价格	600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5550/D81Z	TI	获取价格	600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5550_00	DIOTEC	获取价格	Amplifier Transistor
2N5550_07	ONSEMI	获取价格	Amplifier Transistors NPN Silicon
2N5550_98	KEC	获取价格	TO-92 PACKAGE
2N5550_D26Z	ROCHESTER	获取价格	600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE PACKAGE-3