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2N5550RL1 PDF预览

2N5550RL1

更新时间: 2024-11-27 14:33:31
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
6页 89K
描述
600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

2N5550RL1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.37其他特性:EUROPEAN PART NUMBER
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:140 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):225
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2N5550RL1 数据手册

 浏览型号2N5550RL1的Datasheet PDF文件第2页浏览型号2N5550RL1的Datasheet PDF文件第3页浏览型号2N5550RL1的Datasheet PDF文件第4页浏览型号2N5550RL1的Datasheet PDF文件第5页浏览型号2N5550RL1的Datasheet PDF文件第6页 
2N5550, 2N5551  
Preferred Device  
Amplifier Transistors  
NPN Silicon  
Features  
These are Pb−Free Devices*  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS  
2
Rating  
Symbol  
Value  
Unit  
BASE  
Collector − Emitter Voltage  
V
CEO  
Vdc  
2N5550  
2N5551  
140  
160  
1
EMITTER  
Collector − Base Voltage  
V
CBO  
Vdc  
2N5550  
2N5551  
160  
180  
Emitter − Base Voltage  
V
6.0  
Vdc  
EBO  
TO−92  
CASE 29  
STYLE 1  
Collector Current − Continuous  
I
C
600  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
625  
5.0  
mW  
mW/°C  
A
D
1
1
2
2
Total Device Dissipation @ T = 25°C  
P
1.5  
12  
W
mW/°C  
C
D
3
3
Derate above 25°C  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to +150  
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
R
q
83.3  
2N  
555x  
AYWW G  
G
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
RecommendedOperating Conditions may affect device reliability.  
x
= 0 or 1  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 5  
2N5550/D  

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