5秒后页面跳转
2N5460G PDF预览

2N5460G

更新时间: 2024-11-25 03:56:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
5页 60K
描述
JFET Amplifier P−Channel − Depletion

2N5460G 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:TO-92包装说明:LEAD FREE, CASE 29-11, 3 PIN
针数:3Reach Compliance Code:unknown
HTS代码:8541.21.00.95风险等级:5.02
配置:SINGLEFET 技术:JUNCTION
最大反馈电容 (Crss):2 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:135 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:FET General Purpose Small Signal
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2N5460G 数据手册

 浏览型号2N5460G的Datasheet PDF文件第2页浏览型号2N5460G的Datasheet PDF文件第3页浏览型号2N5460G的Datasheet PDF文件第4页浏览型号2N5460G的Datasheet PDF文件第5页 
2N5460, 2N5461, 2N5462  
JFET Amplifier  
P−Channel − Depletion  
Features  
Pb−Free Packages are Available*  
http://onsemi.com  
2 DRAIN  
MAXIMUM RATINGS  
Rating  
Drain − Gate Voltage  
Symbol  
Value  
40  
Unit  
Vdc  
3
V
DG  
GATE  
Reverse Gate − Source Voltage  
Forward Gate Current  
V
40  
Vdc  
GSR  
G(f)  
I
10  
mAdc  
1 SOURCE  
Total Device Dissipation @ T = 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Derate above 25°C  
Junction Temperature Range  
Storage Channel Temperature Range  
T
65 to +135  
65 to +150  
°C  
°C  
J
T
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
TO−92  
CASE 29  
STYLE 7  
1
2
3
MARKING DIAGRAM  
2N  
546x  
AYWWG  
G
2N546x = Device Code  
x = 0, 1, or 2  
A
= Assembly Location  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 5  
2N5460/D  

2N5460G 替代型号

型号 品牌 替代类型 描述 数据表
2N5461_L99Z FAIRCHILD

功能相似

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92,
2N5461_D26Z FAIRCHILD

功能相似

P-Channel General Purpose Amplifier
2N5461 FAIRCHILD

功能相似

P-Channel General Purpose Amplifier

与2N5460G相关器件

型号 品牌 获取价格 描述 数据表
2N5460J05Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92,
2N5460J18Z TI

获取价格

P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2N5460J18Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92,
2N5460L VISHAY

获取价格

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226A
2N5460L-18 VISHAY

获取价格

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226A
2N5460LTA VISHAY

获取价格

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226A
2N5460RL MOTOROLA

获取价格

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92
2N5460RL ONSEMI

获取价格

P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN
2N5460RL1 MOTOROLA

获取价格

P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2N5460RL1 ONSEMI

获取价格

P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN