2N5460RLRE

更新时间： 2024-11-25 13:04:03

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
4页	120K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N5460RLRE 数据手册

Order this document

by 2N5460/D

SEMICONDUCTOR TECHNICAL DATA

P–Channel — Depletion

2 DRAIN

GATE

1 SOURCE

MAXIMUM RATINGS

Rating

Drain–Gate Voltage

Symbol

Value

Unit

Vdc

Reverse Gate–Source Voltage

Forward Gate Current

GSR

mAdc

G(f)

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

CASE 29–04, STYLE 7

TO–92 (TO–226AA)

Junction Temperature Range

Storage Channel Temperature Range

–65 to +135

–65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Gate–Source Breakdown Voltage

—

Vdc

(BR)GSS

(I = 10 µAdc, V

= 0)

2N5460, 2N5461, 2N5462

Gate Reverse Current

GSS

= 20 Vdc, V

= 30 Vdc, V

= 20 Vdc, V

= 30 Vdc, V

= 0)

2N5460, 2N5461, 2N5462

—

5.0

1.0

nAdc

= 0)

= 0, T = 100°C)

µAdc

Gate–Source Cutoff Voltage

(V = 15 Vdc, I = 1.0 µAdc)

2N5460

2N5461

2N5462

0.75

1.0

1.8

—

6.0

7.5

9.0

Vdc

GS(off)

Gate–Source Voltage

= 15 Vdc, I = 0.1 mAdc)

2N5460

2N5461

2N5462

0.5

0.8

1.5

—

4.0

4.5

6.0

= 15 Vdc, I = 0.2 mAdc)

= 15 Vdc, I = 0.4 mAdc)

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

2N5460

2N5461

2N5462

–1.0

–2.0

–4.0

—

–5.0

–9.0

–16

mAdc

mhos

DSS

= 15 Vdc, V

= 0, f = 1.0 kHz)

SMALL–SIGNAL CHARACTERISTICS

Forward Transfer Admittance

2N5460

2N5461

2N5462

1000

1500

2000

—

4000

5000

6000

= 15 Vdc, V

= 0, f = 1.0 kHz)

Output Admittance (V

= 15 Vdc, V

= 0, f = 1.0 kHz)

—

7.0

2.0

mhos

Input Capacitance (V

= 15 Vdc, V

= 0, f = 1.0 MHz)

5.0

1.0

iss

rss

Reverse Transfer Capacitance (V

= 15 Vdc, V

FUNCTIONAL CHARACTERISTICS

Noise Figure

—

1.0

2.5

= 15 Vdc, V

= 0, R = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz)

GS G

Equivalent Short–Circuit Input Noise Voltage

(V = 15 Vdc, V = 0, f = 100 Hz, BW = 1.0 Hz)

115

nV Hz

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1997

12 3 4

中文翻译

下载PDF

与2N5460RLRE相关器件

型号	品牌	获取价格	描述	数据表
2N5460RLRF	MOTOROLA	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92
2N5460RLRM	MOTOROLA	获取价格	P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2N5460RLRP	MOTOROLA	获取价格	P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2N5460R-STYLE-B	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226A
2N5460R-STYLE-C	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226A
2N5460R-STYLE-D	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226A
2N5460-STYLE-A	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226A
2N5460-STYLE-D	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226A
2N5460-STYLE-E	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226A
2N5460-STYLE-F	ALLEGRO	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226A

与2N5460RLRE相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

2N5460RLRE

2N5460RLRE 数据手册

与2N5460RLRE相关器件

与2N5460RLRE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2N5460RLRE

2N5460RLRE 数据手册

与2N5460RLRE相关器件

与2N5460RLRE相关文章

您还可以找

您在本页遇到什么问题？