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2N5460RLRA PDF预览

2N5460RLRA

更新时间: 2024-11-25 13:04:03
品牌 Logo 应用领域
安森美 - ONSEMI 放大器
页数 文件大小 规格书
8页 78K
描述
暂无描述

2N5460RLRA 数据手册

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ON Semiconductort  
2 DRAIN  
2N5460  
2N5461  
2N5462  
3
JFET Amplifiers  
P–Channel — Depletion  
GATE  
1 SOURCE  
MAXIMUM RATINGS  
Rating  
Drain–Gate Voltage  
Symbol  
Value  
40  
Unit  
V
DG  
Vdc  
Vdc  
Reverse Gate–Source Voltage  
Forward Gate Current  
V
40  
GSR  
G(f)  
I
10  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
1
Junction Temperature Range  
Storage Channel Temperature Range  
T
–65 to +135  
–65 to +150  
°C  
°C  
J
2
3
T
stg  
CASE 29–11, STYLE 7  
TO–92 (TO–226AA)  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
Gate–Source Breakdown Voltage  
V
40  
Vdc  
(BR)GSS  
(I = 10 µAdc, V  
DS  
= 0)  
2N5460, 2N5461, 2N5462  
G
Gate Reverse Current  
I
GSS  
(V  
GS  
(V  
GS  
(V  
GS  
(V  
GS  
= 20 Vdc, V  
= 30 Vdc, V  
= 20 Vdc, V  
= 30 Vdc, V  
= 0)  
2N5460, 2N5461, 2N5462  
2N5460, 2N5461, 2N5462  
5.0  
1.0  
nAdc  
DS  
DS  
DS  
DS  
= 0)  
= 0, T = 100°C)  
= 0, T = 100°C)  
µAdc  
A
A
Gate–Source Cutoff Voltage  
(V = 15 Vdc, I = 1.0 µAdc)  
2N5460  
2N5461  
2N5462  
V
0.75  
1.0  
1.8  
6.0  
7.5  
9.0  
Vdc  
Vdc  
GS(off)  
DS  
D
Gate–Source Voltage  
V
GS  
(V  
DS  
(V  
DS  
(V  
DS  
= 15 Vdc, I = 0.1 mAdc)  
2N5460  
2N5461  
2N5462  
0.5  
0.8  
1.5  
4.0  
4.5  
6.0  
D
= 15 Vdc, I = 0.2 mAdc)  
D
= 15 Vdc, I = 0.4 mAdc)  
D
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
November, 2001 – Rev. 3  
2N5460/D  

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