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2N5401L-C-T92-K PDF预览

2N5401L-C-T92-K

更新时间: 2024-11-24 03:56:19
品牌 Logo 应用领域
友顺 - UTC 晶体开关小信号双极晶体管高压
页数 文件大小 规格书
2页 67K
描述
HIGH VOLTAGE SWITCHING TRANSISTOR

2N5401L-C-T92-K 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.05Is Samacsys:N
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2N5401L-C-T92-K 数据手册

 浏览型号2N5401L-C-T92-K的Datasheet PDF文件第2页 
Transys  
Electronics  
L
I M I T E D  
TO-92 Plastic-Encapsulated Transistors  
TO-92  
2N5401 TRANSISTOR (PNP)  
FEATURE  
Power dissipation  
PCM : 0.625 W (Tamb=25)  
Collector current  
ICM : - 0.6  
Collector-base voltage  
1. EMITTER  
2. BASE  
A
3. COLLECTOR  
1 2 3  
V(BR)CBO : -160 V  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
MIN  
-160  
-150  
-5  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Ic= -100 µA, IE=0  
Ic= -1 mA, IB=0  
V
V
IE= -10 µA, IC=0  
VCB= -120 V, IE=0  
VEB= -4 V, IC=0  
-0.1  
-0.1  
µA  
µA  
Emitter cut-off current  
IEBO  
hFE(1)  
VCE= -5 V, IC=-1 mA  
VCE= -5 V, IC= -10 mA  
VCE= -5 V, IC=-50 mA  
IC= -50 mA, IB= -5 mA  
IC= -50 mA, IB= -5 mA  
VCE=-5V, IC=-10mA  
f =30MHz  
80  
80  
50  
DC current gain  
hFE(2)  
250  
hFE(3)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
-0.5  
-1  
V
V
Transition frequency  
100  
MHz  
fT  

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