5秒后页面跳转
2N5401RLRM PDF预览

2N5401RLRM

更新时间: 2024-11-19 21:54:11
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
6页 73K
描述
Amplifier Transistors

2N5401RLRM 数据手册

 浏览型号2N5401RLRM的Datasheet PDF文件第2页浏览型号2N5401RLRM的Datasheet PDF文件第3页浏览型号2N5401RLRM的Datasheet PDF文件第4页浏览型号2N5401RLRM的Datasheet PDF文件第5页浏览型号2N5401RLRM的Datasheet PDF文件第6页 
2N5401  
Preferred Device  
Amplifier Transistors  
PNP Silicon  
Features  
Pb−Free Packages are Available*  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS  
2
Rating  
Symbol 2N5400 2N5401  
Unit  
Vdc  
BASE  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
Collector Current − Continuous  
Total Device Dissipation  
V
120  
130  
150  
160  
CEO  
CBO  
V
Vdc  
1
EMITTER  
V
EBO  
5.0  
Vdc  
I
C
600  
mAdc  
P
D
D
@ T = 25°C  
Derate above 25°C  
625  
5.0  
mW  
mW/°C  
A
TO−92  
Total Device Dissipation  
P
CASE 29  
STYLE 1  
@ T = 25°C  
Derate above 25°C  
1.5  
12  
Watts  
mW/°C  
C
1
2
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
3
Maximum ratings are those values beyond which device damage can occur.  
Maximumratings applied to the device are individual stress limit values (not nor-  
mal operating conditions) and are not valid simultaneously. If these limits are ex-  
ceeded, device functional operation is not implied, damage may occur and reli-  
ability may be affected.  
MARKING DIAGRAM  
2N54xx  
YWW  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
R
q
JA  
200  
°C/W  
Junction−to−Ambient  
Thermal Resistance,  
Junction−to−Case  
R
q
JC  
83.3  
°C/W  
Y
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
May, 2004 − Rev. 1  
2N5401/D  

2N5401RLRM 替代型号

型号 品牌 替代类型 描述 数据表
2N5401RLRMG ONSEMI

完全替代

Amplifier Transistors PNP Silicon
2N5401RLRAG ONSEMI

完全替代

Amplifier Transistors
2N5401G ONSEMI

类似代替

Amplifier Transistors PNP Silicon

与2N5401RLRM相关器件

型号 品牌 获取价格 描述 数据表
2N5401RLRMG ONSEMI

获取价格

Amplifier Transistors PNP Silicon
2N5401RM FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
2N5401RUBG STMICROELECTRONICS

获取价格

高可靠性PNP双极性晶体管150 V、0.5 A
2N5401RUBT STMICROELECTRONICS

获取价格

高可靠性PNP双极性晶体管150 V、0.5 A
2N5401S KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)
2N5401S_99 KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR
2N5401STOA ZETEX

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
2N5401STOB ZETEX

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
2N5401-STYLE-A ALLEGRO

获取价格

Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
2N5401-STYLE-B ALLEGRO

获取价格

Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92