Datasheet > 2N5401UB06

2N5401UB06

更新时间： 2023-02-26 14:30:56

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	387K
描述
150V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, LCC-3

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2N5401UB06 数据手册

2N5401HR

Hi-Rel PNP bipolar transistor 150 V, 0.5 A

Datasheet

production data

Features

BV_CEO

I_C(max)

_FEat 10 V - 150 mA

150 V

0.5 A

> 60

TO-18

LCC-3

• Hermetic packages

• ESCC and JANS qualified

• Up to 100 krad(Si) low dose rate

LCC-3UB

Figure 1. Internal schematic diagram

Description

The 2N5401HR is a silicon planar PNP transistor

specifically designed and housed in hermetic

packages for aerospace and Hi-Rel applications.

It is available in the JAN qualification system

(MIL-PRF19500 compliance) and in the ESCC

qualification system (ESCC 5000 compliance). In

case of discrepancies between this datasheet and

the relevant agency specification, the latter takes

precedence.

Table 1. Device summary

Qualification system Agency specification Package

Device

Radiation level

EPPL

JANSR2N5401UBx

JANS2N5401UBx

2N5401RUBx

2N5401UB0x

JANSR

JANS

ESCC

MIL-PRF-19500/766

5202/014

100 krad HDR

100 krad ESCC

Target

5202/014

Target

SOC5401RHRx

SOC5401SW

SOC5401HRB

2N5401RHRx

2N5401HR

5202/014

LCC-3

TO-18

100 krad ESCC

Yes

5202/014

100 krad SW

5202/014

Yes

5202/014

100 krad ESCC

5202/014

October 2013

DocID16934 Rev 5

1/12

This is information on a product in full production.

www.st.com

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