Datasheet > 2N5401Q-HAF

2N5401Q-HAF

更新时间： 2024-11-28 14:54:59

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	823K
描述
功率三极管

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中文翻译

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数据手册

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2N5401Q-HAF 数据手册

2N5401Q-HAF

PNP Silicon Epitaxial Planar Power Transistor

Features

• Halogen and Antimony Free(HAF), RoHS compliant

1.Base 2.Collector 3.Emitter 4.Collector

SOT-223 Plastic Package

Applications

• For high voltage amplifier applications

Absolute Maximum Ratings (T_a= 25

)

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

Value

160

150

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Power Dissipation

-I_C

P_tot

T_j

600

Junction Temperature

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

62.5

Unit

Thermal Resistance-Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 5

Dated: 03/05/2023 Rev: 02

12 3 4 5

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