5秒后页面跳转
2N5401NLBU PDF预览

2N5401NLBU

更新时间: 2024-11-27 13:04:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管
页数 文件大小 规格书
4页 112K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, LEAD FREE PACKAGE-3

2N5401NLBU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.57最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2N5401NLBU 数据手册

 浏览型号2N5401NLBU的Datasheet PDF文件第2页浏览型号2N5401NLBU的Datasheet PDF文件第3页浏览型号2N5401NLBU的Datasheet PDF文件第4页 
Discrete POWER & Signal  
Technologies  
2N5401  
MMBT5401  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 2L  
E
PNP General Purpose Amplifier  
This device is designed as a general purpose amplifier and switch  
for applications requiring high voltages. Sourced from Process 74.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
150  
160  
5.0  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
200  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5401  
*MMBT5401  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
Rθ  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

与2N5401NLBU相关器件

型号 品牌 获取价格 描述 数据表
2N5401Q-HAF SWST

获取价格

功率三极管
2N5401RL1 ONSEMI

获取价格

Amplifier Transistors
2N5401RL1G ONSEMI

获取价格

Amplifier Transistors PNP Silicon
2N5401RLRA ONSEMI

获取价格

Amplifier Transistors
2N5401RLRAG ONSEMI

获取价格

Amplifier Transistors
2N5401RLRM ONSEMI

获取价格

Amplifier Transistors
2N5401RLRMG ONSEMI

获取价格

Amplifier Transistors PNP Silicon
2N5401RM FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
2N5401RUBG STMICROELECTRONICS

获取价格

高可靠性PNP双极性晶体管150 V、0.5 A
2N5401RUBT STMICROELECTRONICS

获取价格

高可靠性PNP双极性晶体管150 V、0.5 A