Datasheet > 2N5401_10

2N5401_10

更新时间： 2022-09-16 13:31:35

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	341K
描述
PNP Plastic Encapsulated Transistor

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2N5401_10 数据手册

2N5401

-0.6 A, -160 V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92

FEATURES

ꢀ

Switching and amplification in high voltage

Applications such as telephony

Low current (max. 600mA)

High voltage (max. 160V)

Millimeter

REF.

Min.

Max.

4.70

4.40

4.30

12.70

3.30

0.36

3.81

0.56

0.51

1.27 TYP.

1.10

2.42

0.36

Collector

2.66

0.76

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

Collector to Base Voltage

SYMBOL

V_CBO

RATING

-160

UNIT

Collector to Emitter Voltage

Emitter to Base Voltage

V_CEO

-150

V_EBO

-5

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

I_C

-0.6

P_C

0.625

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

PARAMETER

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

SYMBOL MIN

TYP

MAX UNIT

TEST CONDITION

I_C=-100µA, I_E= 0A

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-160

-150

-5

I_C=-1mA, I_B= 0A

I_E=-10µA, I_C= 0A

V_CB=-120 V, I_E= 0 A

V_EB=-3 V, I_C= 0 A

V_CE=-5V, I_C=-1mA

V_CE=-5V, I_C=-10mA

V_CE=-5V, I_C=-50mA

I_C=-50mA, I_B=-5mA

-50

Emitter Cut-Off Current

I_EBO

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE(sat)

f_T

DC Current Gain

240

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

-0.5

-1

100

300

MHz V_CE= -5V, I_C= -10mA, f=30MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

4-Feb-2010 Rev. B

Page 1 of 2

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