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2N5401A-BP PDF预览

2N5401A-BP

更新时间: 2024-11-24 12:58:07
品牌 Logo 应用领域
美微科 - MCC 晶体放大器晶体管
页数 文件大小 规格书
5页 281K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3

2N5401A-BP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.02Is Samacsys:N
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):85
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2N5401A-BP 数据手册

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M C C  
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20736 Marilla Street Chatsworth  
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TM  
2N5401  
Micro Commercial Components  
)HDWXUHVꢀ  
PNP Silicon  
Amplifier Transistor  
625mW  
·
Through Hole Package  
150oC Junction Temperature  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
TO-92  
A
E
0HFKDQLFDOꢀ'DWDꢀ  
Case: TO-92, Molded Plastic  
B
Marking: 2N5401  
C
Charateristic  
Symbol Value Unit  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
150  
160  
5.0  
V
V
V
D
600  
mA  
mW  
Power Dissipation@TA=25oC  
625  
5.0  
Pd  
mW/oC  
W
Derate above 25  
Power Dissipation@TC=25oC  
E
B
C
1.5  
12  
Pd  
R
G
mW/oC  
Derate above 25  
Maximum Thermal Resistance,  
Junction to Ambient Air  
Maximum Thermal Resistance,  
Junction to Case  
oC/W  
200  
INCHES  
MM  
DIM  
A
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
MAX  
MIN  
MAX  
4.70  
4.70  
---  
NOTE  
.185  
.185  
---  
4.45  
4.46  
12.7  
0.41  
3.43  
2.42  
oC/W  
oC  
B
R
83.3  
C
D
.020  
.145  
.105  
0.63  
3.68  
2.67  
E
T, TSTG  
j
G
Operating & Storage Temperature  
-55~150  
www.mccsemi.com  
1 of 5  
Revision: B  
2011/07/11  

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