Datasheet > 晶体管 > 小信号双极晶体管> 2N5401-C-AB3-B

2N5401-C-AB3-B

更新时间： 2024-11-24 03:56:19

品牌	Logo	应用领域
友顺 - UTC		晶体开关晶体管高压
页数	文件大小	规格书
2页	67K
描述
HIGH VOLTAGE SWITCHING TRANSISTOR

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中文翻译

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数据手册

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2N5401-C-AB3-B 数据手册

Transys

Electronics

I M I T E D

TO-92 Plastic-Encapsulated Transistors

TO-92

2N5401 TRANSISTOR (PNP)

FEATURE

Power dissipation

P_CM: 0.625 W (Tamb=25℃)

Collector current

I_CM: - 0.6

Collector-base voltage

1. EMITTER

2. BASE

3. COLLECTOR

1 2 3

V_(BR)CBO: -160 V

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

MIN

-160

-150

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic= -100 µA, I_E=0

Ic= -1 mA, I_B=0

I_E= -10 µA, I_C=0

V_CB= -120 V, I_E=0

V_EB= -4 V, I_C=0

-0.1

µA

Emitter cut-off current

I_EBO

h_FE(1)

V_CE= -5 V, I_C=-1 mA

V_CE= -5 V, I_C= -10 mA

V_CE= -5 V, I_C=-50 mA

I_C= -50 mA, I_B= -5 mA

V_CE=-5V, I_C=-10mA

f =30MHz

DC current gain

h_FE(2)

250

h_FE(3)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

-0.5

-1

Transition frequency

100

MHz

f_T

中文翻译

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