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2N5031 PDF预览

2N5031

更新时间: 2024-11-17 22:45:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体小信号双极晶体管射频小信号双极晶体管微波放大器
页数 文件大小 规格书
4页 84K
描述
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N5031 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:CYLINDRICAL, O-MBCY-W4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.36
Is Samacsys:N最大集电极电流 (IC):0.02 A
集电极-发射极最大电压:10 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJEDEC-95代码:TO-72
JESD-30 代码:O-MBCY-W4JESD-609代码:e0
元件数量:1端子数量:4
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1200 MHz
Base Number Matches:1

2N5031 数据手册

 浏览型号2N5031的Datasheet PDF文件第2页浏览型号2N5031的Datasheet PDF文件第3页浏览型号2N5031的Datasheet PDF文件第4页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
2N5031  
RF & MICROWAVE DISCRETE  
LOW POWER TRANSISTORS  
Features  
·
·
·
Silicon NPN, To-72 packaged VHF/UHF Transistor  
1.2 GHz Current-Gain Bandwidth Product @ 5mA IC  
Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz  
2
1. Emitter  
2. Base  
3. Collector  
4. Case  
1
3
4
TO-72  
DESCRIPTION:  
General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial  
equipment.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Value  
10  
Unit  
Vdc  
Vdc  
Vdc  
mA  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
15  
3.0  
20  
Thermal Data  
P
D
200  
1.14  
mWatts  
mW/ ºC  
Total Device Dissipation @ T = 25ºC  
Derate above 25ºC  
A
MSC1303.PDF 10-25-99  

2N5031 替代型号

型号 品牌 替代类型 描述 数据表
2SC4093-T1-A RENESAS

类似代替

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3545-T1B NEC

功能相似

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili

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