Datasheet > 2N5039

2N5039

更新时间： 2024-09-30 14:54:39

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	461K
描述
75V,20A,140W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

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2N5039 数据手册

2N5038

2N5039

www.centralsemi.com

SILICON

NPN POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5038 and 2N5039

are silicon NPN power transistors designed for power

amplifier and power oscillator applications where high

current, high voltage, and fast switching speeds are

required.

MARKING: FULL PART NUMBER

TO-3 CASE

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

2N5038

150

110

2N5039

120

UNITS

CBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

CEX

CER

CEO

EBO

7.0

5.0

140

°C

°C/W

T , T

-65 to +200

1.25

stg



ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

2N5038

2N5039

SYMBOL

TEST CONDITIONS

MIN

150

110

7.0

MAX

5.0

MIN

120

7.0

MAX

1.0

2.5

3.3

1.8

250

100

UNITS

=140V, V =1.5V

CEV

CEO

EBO

=110V, V =1.5V

=100V, V =1.5V, T =150°C

=85V, V =1.5V, T =150°C

=70V

=55V

=5.0V

=7.0V

I =200mA, V =1.5V

CEX

CER

CEO

I =200mA, R ≤50Ω

I =200mA

I =50mA

EBO

I =12A, I =1.2A

1.0

2.5

3.3

1.8

250

100

CE(SAT)

BE(SAT)

BE(ON)

I =10A, I =1.0A

I =20A, I =5.0A

=5.0V, I =12A

=5.0V, I =10A

=5.0V, I =2.0A

=5.0V, I =10A

=5.0V, I =12A

R1 (17-March 2015)

12 3 4 5

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