Datasheet > 2N5039

2N5039

更新时间： 2024-09-29 03:56:15

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描述
Silicon NPN Transistor

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2N5039 数据手册

2N5039

Silicon NPN Transistor

Data Sheet

Description

Applications

• High-speed power-switching

• High power

Semicoa Semiconductors offers:

• NPN silicon transistor

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N5039J)

• JANTX level (2N5039JX)

• JANTXV level (2N5039JV)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV

• Radiation testing (total dose) upon request

Features

• Hermetically sealed TO-3 metal can

• Also available in chip configuration

• Chip geometry 9351

• Reference document:

MIL-PRF-19500/439

Benefits

• Qualification Levels: JAN, JANTX, and

JANTXV

• Radiation testing available

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

Absolute Maximum Ratings

T_C= 25°C unless otherwise specified

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

V_CEO

V_CBO

Rating

125

Unit

Volts

Emitter-Base Voltage

V_EBO

I_C

Collector Current, Continuous

Power Dissipation, T_A= 25°C

140

P_T

800

mW/°C

°C/W

Derate linearly above 25°C

Thermal Resistance

1.25

R_θJA

T_J

°C

Operating Junction Temperature

Storage Temperature

-65 to +200

T_STG

Semicoa Semiconductors, Inc.

Rev. E

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

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