Datasheet > 2N4416A_TO-18

2N4416A_TO-18

更新时间： 2024-09-17 07:28:39

品牌	Logo	应用领域
MICROSS		放大器
页数	文件大小	规格书
1页	286K
描述
a N-Channel high frequency JFET amplifier

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2N4416A_TO-18 数据手册

2N4416A

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix 2N4416A

The 2N4416A is a N-Channel high frequency JFET amplifier

FEATURES

The 2N4416A N-channel JFET is designed to provide

DIRECT REPLACEMENT FOR SILICONIX 2N4416A

EXCEPTIONAL GAIN (400 MHz)

VERY LOW NOISE FIGURE (400 MHz)

VERY LOW DISTORTION

HIGH AC/DC SWITCH OFF‐ISOLATION

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

high-performance amplification at high frequencies.

10dB (min)

4dB (max)

The hermetically sealed TO-18 package is well suited

for military applications and harsh environment

applications.

2N4416A Benefits:

Wideband High Gain

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Gate Current (Note 1)

MAXIMUM VOLTAGES

Gate to Drain or Gate to Source

Very High System Sensitivity

High Quality of Amplification

High-Speed Switching Capability

High Low-Level Signal Amplification

‐65°C to +200°C

‐55°C to +135°C

300mW

10mA

‐35V

2N4416A Applications:

High-Frequency Amplifier / Mixer

Oscillator

Sample-and-Hold

Very Low Capacitance Switches

2N4416A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(off)

I_DSS

I_GSS

g_fs

g_os

C_iss

C_rss

C_oss

CHARACTERISTIC

MIN

‐35

‐2.5

‐‐

4500

‐‐

TYP.

‐‐

MAX

‐‐

‐6

UNITS

µS

nV/√Hz

CONDITIONS

I_G= ‐1µA, V_DS= 0V

V_DS= 15V, I_D= 1nA

V_DS= 15V, V_GS= 0V

V_GS= ‐20V, V_DS= 0V

Gate to Source Breakdown Voltage

Gate to Source Cutoff Voltage

Gate to Source Saturation Current

Gate Leakage Current

‐0.1

7500

0.8

Forward Transconductance

V_DS= 15V, V_GS= 0V, f = 1kHz

Output Conductance

Click To Buy

Input Capacitance

Reverse Transfer Capacitance²

V_DS= 15V, V_GS= 0V, f = 1MHz

V_DS= 10V, V_GS= 0V, f = 1kHz

CONDITIONS

Output Capacitance²

‐‐

e_n

Equivalent Input Noise Voltage

2N4416A HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

100 Mhz

MIN

400 Mhz

MIN MAX

UNITS

MAX

100

2500

g_Iss

b_Iss

Input Conductance

Input Susceptance²

Output Conductance

Output Susceptance²

Forward Transconductance

Power Gain²

‐‐

1000

10000

100

4000

‐‐

µS

V_DS= 15V, V_GS= 0V

g_oss

‐‐

b_oss

G_fs

‐‐

1000

‐‐

4000

‐‐

G_ps

‐‐

V_DS= 15V, I_D= 5mA

Noise Figure²

V_DS= 15V, I_D= 5mA, R_G= 1kΩ

NOTES

1 . Absolute maximum ratings are limiting values above which 2N4416A serviceability may be impaired.

2. Not production tested, guaranteed by design

Micross Components Europe

Available Packages:

TO-18 (Bottom View)

2N4416A in TO-18

2N4416A in bare die.

Please contact Micross for full

package and die dimensions

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed

for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

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