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2N4401RLRMG PDF预览

2N4401RLRMG

更新时间: 2024-11-07 07:28:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
7页 191K
描述
General Purpose Transistors

2N4401RLRMG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.02最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz最大关闭时间(toff):255 ns
最大开启时间(吨):35 nsBase Number Matches:1

2N4401RLRMG 数据手册

 浏览型号2N4401RLRMG的Datasheet PDF文件第2页浏览型号2N4401RLRMG的Datasheet PDF文件第3页浏览型号2N4401RLRMG的Datasheet PDF文件第4页浏览型号2N4401RLRMG的Datasheet PDF文件第5页浏览型号2N4401RLRMG的Datasheet PDF文件第6页浏览型号2N4401RLRMG的Datasheet PDF文件第7页 
2N4401  
General Purpose  
Transistors  
NPN Silicon  
http://onsemi.com  
Features  
PbFree Packages are Available*  
COLLECTOR  
3
MAXIMUM RATINGS  
2
Rating  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Symbol  
Value  
40  
Unit  
Vdc  
BASE  
V
CEO  
CBO  
1
V
60  
Vdc  
EMITTER  
V
EBO  
6.0  
Vdc  
Collector Current Continuous  
I
C
600  
mAdc  
Total Device Dissipation  
P
D
D
@ T = 25°C  
625  
5.0  
mW  
A
Derate above 25°C  
mW/°C  
TO92  
CASE 29  
STYLE 1  
Total Device Dissipation  
P
@ T = 25°C  
1.5  
12  
W
mW/°C  
C
Derate above 25°C  
1
1
Operating and Storage Junction  
Temperature Range  
T , T  
55 to  
+150  
°C  
2
2
J
stg  
3
3
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, JunctiontoAmbient  
Thermal Resistance, JunctiontoCase  
R
q
JA  
MARKING DIAGRAM  
R
q
JC  
83.3  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
RecommendedOperating Conditions may affect device reliability.  
2N  
4401  
AYWW G  
G
2N4401 = Device Code  
A
= Assembly Location  
Y
= Year  
WW  
G
= Work Week  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
February, 2010 Rev. 4  
2N4401/D  

2N4401RLRMG 替代型号

型号 品牌 替代类型 描述 数据表
2N4401TF ONSEMI

类似代替

NPN Bipolar Junction Transistor, TO-92
2N4401BU ONSEMI

类似代替

NPN Bipolar Junction Transistor, TO-92
2N4401RLRAG ONSEMI

类似代替

General Purpose Transistors

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