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2N4401TF PDF预览

2N4401TF

更新时间: 2024-11-18 20:27:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
7页 85K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN

2N4401TF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:2.78
Is Samacsys:N最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz最大关闭时间(toff):255 ns
最大开启时间(吨):35 nsBase Number Matches:1

2N4401TF 数据手册

 浏览型号2N4401TF的Datasheet PDF文件第2页浏览型号2N4401TF的Datasheet PDF文件第3页浏览型号2N4401TF的Datasheet PDF文件第4页浏览型号2N4401TF的Datasheet PDF文件第5页浏览型号2N4401TF的Datasheet PDF文件第6页浏览型号2N4401TF的Datasheet PDF文件第7页 
2N4401  
MMBT4401  
C
E
TO-92  
C
B
SOT-23  
Mark: 2X  
B
E
NPN General Pupose Amplifier  
This device is designed for use as a medium power amplifier and  
switch requiring collector currents up to 500 mA.  
Absolute Maximum Ratings*  
TA= 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
40  
60  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
600  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N4401  
*MMBT4401  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
350  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
2001 Fairchild Semiconductor Corporation  
2N4401/MMBT4401, Rev A  

2N4401TF 替代型号

型号 品牌 替代类型 描述 数据表
2N4401TA FAIRCHILD

完全替代

This device is designed for use as a medium power amplifier and switch requiring collector
2N4401RLRA ONSEMI

完全替代

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2N4401TRB CENTRAL

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2N4401TRC CENTRAL

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Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,