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2N4401RLRP PDF预览

2N4401RLRP

更新时间: 2024-11-17 21:54:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关
页数 文件大小 规格书
8页 124K
描述
General Purpose Transistors

2N4401RLRP 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CASE 29-11, TO-226AA, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.03Is Samacsys:N
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):240
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):255 ns最大开启时间(吨):35 ns
Base Number Matches:1

2N4401RLRP 数据手册

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2N4401  
Preferred Device  
General Purpose  
Transistors  
NPN Silicon  
Features  
http://onsemi.com  
Pb−Free Packages are Available*  
COLLECTOR  
3
MAXIMUM RATINGS  
2
BASE  
Rating  
Symbol  
Value  
40  
Unit  
Vdc  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
Collector Current − Continuous  
Total Device Dissipation  
V
CEO  
V
CBO  
1
60  
Vdc  
EMITTER  
V
EBO  
6.0  
Vdc  
I
C
600  
mAdc  
P
D
D
MARKING  
DIAGRAM  
625  
5.0  
mW  
mW/°C  
@ T = 25°C  
Derate above 25°C  
A
1
2
Total Device Dissipation  
@ T = 25°C  
Derate above 25°C  
P
2N  
4401  
YWW  
1.5  
12  
W
mW/°C  
C
3
TO−92  
CASE 29  
STYLE 1  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
Maximumratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
Y
WW  
= Year  
= Work Week  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
200  
°C/W  
Thermal Resistance,  
Junction−to−Case  
R
q
JC  
83.3  
°C/W  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 1  
2N4401/D  

2N4401RLRP 替代型号

型号 品牌 替代类型 描述 数据表
2N4401G ONSEMI

完全替代

General Purpose Transistors
2N4401ZL1 ONSEMI

完全替代

General Purpose Transistors
2N4401RLRAG ONSEMI

完全替代

General Purpose Transistors

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TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 600MA I(C) | TO-92