2N4400/D

更新时间： 2024-11-17 23:19:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	306K
描述
General Purpose Transistors NPN

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2N4400/D 数据手册

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SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

*Motorola Preferred Device

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

Unit

CEO

CBO

EBO

Vdc

6.0

600

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

6.0

—

Vdc

(BR)CEO

(I = 1.0 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = 0.1 mAdc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = 0.1 mAdc, I = 0)

—

Vdc

(BR)EBO

Base Cutoff Current

(V = 35 Vdc, V

0.1

µAdc

BEV

= 0.4 Vdc)

CE EB

Collector Cutoff Current

(V = 35 Vdc, V

—

CEX

CE EB

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

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2N4400-18FLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
2N4400-18R	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
2N4400-18RLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R,
2N4400-5	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon