Datasheet > 2N3905/D

2N3905/D

更新时间： 2024-09-12 23:19:47

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安森美 - ONSEMI		晶体晶体管
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6页	149K
描述
General Purpose Transistors PNP

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SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

*Motorola Preferred Device

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

Unit

Vdc

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

CEO

CBO

EBO

Vdc

5.0

200

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Power Dissipation @ T = 60°C

250

Total Device Dissipation @ T = 25°C

1.5

Watts

mW/°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

(1)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to

Ambient

200

°C/W

Thermal Resistance, Junction to Case

83.3

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(2)

Collector–Emitter Breakdown Voltage

(I = 1.0 mAdc, I = 0)

5.0

—

Vdc

(BR)CEO

Collector–Base Breakdown Voltage

(I = 10 Adc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = 10 Adc, I = 0)

Vdc

(BR)EBO

Base Cutoff Current

(V = 30 Vdc, V

nAdc

= 3.0 Vdc)

Collector Cutoff Current

(V = 30 Vdc, V

—

CEX

1. Indicates Data in addition to JEDEC Requirements.

2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

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