型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N316 | DIGITRON |
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TRANSISTOR,BJT,PNP,10V V(BR)CEO,200MA I(C),TO-5 | |
2N3163 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N3163E3 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N3164 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N3164E3 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N3165 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N3165E3 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N3166 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N3166E3 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 | |
2N3167 | ETC |
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TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-53 |