是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
风险等级: | 5.46 | 最大集电极电流 (IC): | 0.6 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-18 |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 175 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.4 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 250 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3117 | NJSEMI |
获取价格 |
SI NPN LO-PWR BJT MANUFACTURER | |
2N3117 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N3117LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
2N3118 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 500MA I(C) | TO-5 | |
2N3119 | NJSEMI |
获取价格 |
SI NPN POWER HF BJI MANUFACTURER | |
2N3119 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N3119LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | |
2N312 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-43 | |
2N3120 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N3120 | ONSEMI |
获取价格 |
45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |