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2N2919 PDF预览

2N2919

更新时间: 2024-11-30 07:28:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
4页 289K
描述
NPN SILICON DUAL TRANSISTOR

2N2919 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-99
包装说明:CYLINDRICAL, O-MBCY-W6针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.13
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:60 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):150
JESD-30 代码:O-MBCY-W6JESD-609代码:e0
元件数量:2端子数量:6
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

2N2919 数据手册

 浏览型号2N2919的Datasheet PDF文件第2页浏览型号2N2919的Datasheet PDF文件第3页浏览型号2N2919的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
NPN SILICON DUAL TRANSISTOR  
Qualified per MIL-PRF-19500 /355  
DEVICES  
LEVELS  
JAN  
JANTX  
JANTV  
JANS  
2N2919  
2N2920  
2N2919L  
2N2920L  
2N2919U  
2N2920U  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
60  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
70  
Vdc  
6.0  
30  
Vdc  
mAdc  
One  
Both  
Section 1 Sections 2  
PT  
200 350  
mW  
°C  
Total Power Dissipation @ TA = +25°C  
TO-78  
Operating & Storage Junction Temperature Range  
TJ, Tstg  
-65 to +200  
NOTES:  
1. Derate linearly 1.143mW/°C for TA > +25°C (one section)  
2. Derate linearly 2.000mW/°C for TA > +25°C (both sections)  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc; Pulsed  
V(BR)CEO  
60  
Vdc  
U - Package  
Collector-Base Cutoff Current  
VCB = 45Vdc  
VCB = 70Vdc  
ηAdc  
μAdc  
2.0  
10  
ICBO  
Emitter-Base Cutoff Current  
VEB = 5.0Vdc  
VEB = 6.0Vdc  
2.0  
10  
ηAdc  
μAdc  
IEBO  
T4-LDS-0202 Rev. 1 (110638)  
Page 1 of 4  

2N2919 替代型号

型号 品牌 替代类型 描述 数据表
2N2919L MICROSEMI

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NPN SILICON DUAL TRANSISTOR

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