5秒后页面跳转
2N2919L PDF预览

2N2919L

更新时间: 2024-11-30 07:28:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
4页 289K
描述
NPN SILICON DUAL TRANSISTOR

2N2919L 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TO-78
包装说明:CYLINDRICAL, O-MBCY-W6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.13
Is Samacsys:N最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:60 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):150JESD-30 代码:O-MBCY-W6
JESD-609代码:e0元件数量:2
端子数量:6封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

2N2919L 数据手册

 浏览型号2N2919L的Datasheet PDF文件第2页浏览型号2N2919L的Datasheet PDF文件第3页浏览型号2N2919L的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
NPN SILICON DUAL TRANSISTOR  
Qualified per MIL-PRF-19500 /355  
DEVICES  
LEVELS  
JAN  
JANTX  
JANTV  
JANS  
2N2919  
2N2920  
2N2919L  
2N2920L  
2N2919U  
2N2920U  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
60  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
70  
Vdc  
6.0  
30  
Vdc  
mAdc  
One  
Both  
Section 1 Sections 2  
PT  
200 350  
mW  
°C  
Total Power Dissipation @ TA = +25°C  
TO-78  
Operating & Storage Junction Temperature Range  
TJ, Tstg  
-65 to +200  
NOTES:  
1. Derate linearly 1.143mW/°C for TA > +25°C (one section)  
2. Derate linearly 2.000mW/°C for TA > +25°C (both sections)  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc; Pulsed  
V(BR)CEO  
60  
Vdc  
U - Package  
Collector-Base Cutoff Current  
VCB = 45Vdc  
VCB = 70Vdc  
ηAdc  
μAdc  
2.0  
10  
ICBO  
Emitter-Base Cutoff Current  
VEB = 5.0Vdc  
VEB = 6.0Vdc  
2.0  
10  
ηAdc  
μAdc  
IEBO  
T4-LDS-0202 Rev. 1 (110638)  
Page 1 of 4  

与2N2919L相关器件

型号 品牌 获取价格 描述 数据表
2N2919LE3 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
2N2919LEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78
2N2919U MICROSEMI

获取价格

NPN SILICON DUAL TRANSISTOR
2N2919UE3 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon,
2N292 ETC

获取价格

alloy-junction germanium transistors
2N2920 SEMICOA

获取价格

Chip Type 2C2484 Geometry 0307 Polarity NPN
2N2920 CENTRAL

获取价格

Dual Transistors
2N2920 MICROSEMI

获取价格

NPN SILICON DUAL TRANSISTOR
2N2920 FAIRCHILD

获取价格

Transistor,
2N2920 SEME-LAB

获取价格

DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE