是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.67 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.03 A |
集电极-发射极最大电压: | 60 V | 配置: | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE): | 60 | JEDEC-95代码: | TO-78 |
JESD-30 代码: | O-MBCY-W6 | JESD-609代码: | e3 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | MATTE TIN (315) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 10 | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 60 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2919DCSM | SEME-LAB |
获取价格 |
Dual Bipolar NPN Devices in a hermetically sealed | |
2N2919L | MICROSEMI |
获取价格 |
NPN SILICON DUAL TRANSISTOR | |
2N2919LE3 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, | |
2N2919LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78 | |
2N2919U | MICROSEMI |
获取价格 |
NPN SILICON DUAL TRANSISTOR | |
2N2919UE3 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, | |
2N292 | ETC |
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alloy-junction germanium transistors | |
2N2920 | SEMICOA |
获取价格 |
Chip Type 2C2484 Geometry 0307 Polarity NPN | |
2N2920 | CENTRAL |
获取价格 |
Dual Transistors | |
2N2920 | MICROSEMI |
获取价格 |
NPN SILICON DUAL TRANSISTOR |