2N2919

更新时间： 2024-02-23 03:04:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体小信号双极晶体管
页数	文件大小	规格书
4页	289K
描述
NPN SILICON DUAL TRANSISTOR

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2N2919 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	SMALL OUTLINE, R-PDSO-N6
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.42
Is Samacsys：	N	最大集电极电流 (IC)：	0.03 A
集电极-发射极最大电压：	60 V	配置：	SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：	150	JESD-30 代码：	R-PDSO-N6
JESD-609代码：	e0	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	235	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	NO LEAD
端子位置：	DUAL	处于峰值回流温度下的最长时间：	20
晶体管元件材料：	SILICON	Base Number Matches：	1

2N2919 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PACKAGE DIMENSIONS

DIMENSIONS

Inches Millimeters

Min

Symbol

Notes

Max

.370

.335

.260

.041

.160

Min

Max

9.40

8.51

6.60

1.04

4.06

CD1

LC1

.335

.305

.140

.009

.140

8.51

7.75

3.56

0.23

3.56

.200 TP

5.08 TP

.016

.021

.041

0.53

See notes 10, 11 and 12

.019

.050

.041

0.48

1.27

.250

.100

6.35

2.54

.050

.045

.034

.010

1.27

1.14

0.86

0.25

5, 6

4, 5

.029

.028

0.74

0.71

45°TP

NOTES:

Dimensions are in inches.

Millimeters are given for general information only.

Tab Shown omitted.

Lead number 4 and 8 omitted on this variation.

Beyond r maximum, TW shall be held to a minimum length of .21 inch (5.33 mm)

TL shall be measured from maximum CD.

Details of outline in this zone are optional.

CD1 shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.

Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of

true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by

direct methods or by the gauge and gauging procedures described on gauge drawing GS-1.

10 LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL

minimum.

11 For transistor types 2N2919 and 2N2920, LL is .500 inch (12.70 mm) minimum and .750 inch (19.05 mm) maximum.

12 For transistor type 2N2919L and 2N2920L, LL is 1.500 inches (38.10 mm) minimum and 1.750 inches (44.45 mm)

maximum.

13 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions 2N2919, 2N2919L, 2N2920, and 2N2920L (TO-78).

T4-LDS-0202 Rev. 1 (110638)

Page 3 of 4

1 234

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