Datasheet > 2N2422AHR

2N2422AHR

更新时间： 2024-11-12 18:19:07

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
2页	201K
描述
Unijunction Transistor

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2N2422AHR 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Base Number Matches：	1

2N2422AHR 数据手册

D I G I T R O N S E M I C O N D U C T O R S

2N2417 - 2N2422, A, B

SILICON UNIJUNCTION TRANSISTOR

MAXIMUM RATINGS

Rating

Power dissipation⁽¹⁾

Symbol

P_D

Value

Unit

350

RMS emitter current

I_E

(2)

Peak pulse emitter current

i_e

Amps

Volts

°C

Emitter reverse voltage

V_B2E

V_B2B1

T_J

Interbase voltage

Operating junction temperature range

-65 to 175

Storage temperature range

T_stg

-65 to 175

°C

Note 1: Derate 2.33mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry.

Note 2: Capacitor discharge – 10µF or less, 30 volts or less.

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

2N2417, 2N2417A, 2N2417B

2N2418, 2N2418A, 2N2418B

2N2419, 2N2419A, 2N2419B

2N2420, 2N2420A, 2N2420B

2N2421, 2N2421A, 2N2422B

2N2422, 2N2422A, 2N2422B

0.51

0.56

0.62

0.68

0.75

Intrinsic standoff ratio

(V_B2B1= 10V)

(1)

0.62

2N2417, 2N2417A, 2N2417B

2N2418, 2N2418A, 2N2418B

2N2419, 2N2419A, 2N2419B

2N2420, 2N2420A, 2N2420B

2N2421, 2N2421A, 2N2422B

2N2422, 2N2422A, 2N2422B

4.7

6.2

4.7

6.2

4.7

6.8

9.1

6.8

9.1

6.8

9.1

Interbase resistance

(V_B2B1= 3V, I_E= 0)

r_BB

kohms

6.2

Emitter saturation voltage

V_EB1(sat)

I_B2(mod)

Volts

(V_B2B1= 10V, I_E= 50mA)⁽²⁾

3.5

Modulated interbase current

(V_B2B1= 10V, I_E= 50mA)

2N2417, 2N2418, 2N2419, 2N2420,

2N2421, 2N2422

2N2417A, 2N2418A, 2N2419A,

2N2420A, 2N2421A, 2N2422A

2N2417B, 2N2418B, 2N2419B,

2N2420B, 2N2421B, 2N2422B

V_B2E= 60V

Emitter reverse current

(I_B1= 0)

_B2E= 60V

_B2E= 30V

I_EB2O

µA

0.2

2N2417, 2N2418, 2N2419, 2N2420,

2N2421, 2N2422

2N2417A, 2N2418A, 2N2419A,

2N2420A, 2N2421A, 2N2422A

2N2417B, 2N2418B, 2N2419B,

2N2420B, 2N2421B, 2N2422B

Peak point emitter current

(V_B2B1= 25V)

I_EB2O

µA

Valley point current

I_V

(V_B2B1= 20V, R_B2= 100ohms)⁽²⁾

2N2417, 2N2418, 2N2419, 2N2420,

2N2421, 2N2422

2N2417A, 2N2418A, 2N2419A,

2N2420A, 2N2421A, 2N2422A

2N2417B, 2N2418B, 2N2419B,

2N2420B, 2N2421B, 2N2422B

Base-one peak pulse voltage⁽³⁾

V_OB1

Note 1: Intrinsic standoff voltage: η = V_P-V_F/V_B2B1, where V_P= peak point emitter voltage , V_B2B1= interbase voltage, V_F= emitter to base one junction diode drop

(≈ 0.45V @ 10µA).

Note 2: PW ≈ 300µs, duty cycle ≤ 2% to avoid internal heating due to interbase modulation which may result in erroneous readings

Note 3: Base one peak pulse voltage is used to ensure minimum pulse amplitude for applications in SCR firing circuits and other types of pulse circuits.

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20121019

中文翻译

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