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2N2422HR PDF预览

2N2422HR

更新时间: 2024-11-12 18:19:07
品牌 Logo 应用领域
DIGITRON /
页数 文件大小 规格书
2页 201K
描述
Unijunction Transistor

2N2422HR 技术参数

生命周期:ActiveReach Compliance Code:unknown
Base Number Matches:1

2N2422HR 数据手册

 浏览型号2N2422HR的Datasheet PDF文件第2页 
D I G I T R O N S E M I C O N D U C T O R S  
2N2417 - 2N2422, A, B  
SILICON UNIJUNCTION TRANSISTOR  
MAXIMUM RATINGS  
Rating  
Power dissipation(1)  
Symbol  
PD  
Value  
Unit  
mW  
mA  
350  
RMS emitter current  
IE  
70  
(2)  
Peak pulse emitter current  
ie  
2
60  
Amps  
Volts  
Volts  
°C  
Emitter reverse voltage  
VB2E  
VB2B1  
TJ  
Interbase voltage  
65  
Operating junction temperature range  
-65 to 175  
Storage temperature range  
Tstg  
-65 to 175  
°C  
Note 1: Derate 2.33mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry.  
Note 2: Capacitor discharge – 10µF or less, 30 volts or less.  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
2N2417, 2N2417A, 2N2417B  
2N2418, 2N2418A, 2N2418B  
2N2419, 2N2419A, 2N2419B  
2N2420, 2N2420A, 2N2420B  
2N2421, 2N2421A, 2N2422B  
2N2422, 2N2422A, 2N2422B  
0.51  
0.51  
0.56  
0.56  
0.62  
-
-
-
-
-
-
0.62  
0.62  
0.68  
0.68  
0.75  
0.75  
-
-
-
-
-
-
Intrinsic standoff ratio  
(VB2B1 = 10V)  
η
(1)  
0.62  
2N2417, 2N2417A, 2N2417B  
2N2418, 2N2418A, 2N2418B  
2N2419, 2N2419A, 2N2419B  
2N2420, 2N2420A, 2N2420B  
2N2421, 2N2421A, 2N2422B  
2N2422, 2N2422A, 2N2422B  
4.7  
6.2  
4.7  
6.2  
4.7  
-
-
-
-
-
-
6.8  
9.1  
6.8  
9.1  
6.8  
9.1  
Interbase resistance  
(VB2B1 = 3V, IE = 0)  
rBB  
kohms  
6.2  
Emitter saturation voltage  
VEB1(sat)  
IB2(mod)  
Volts  
mA  
(VB2B1 = 10V, IE = 50mA)(2)  
-
-
3.5  
15  
-
-
Modulated interbase current  
(VB2B1 = 10V, IE = 50mA)  
2N2417, 2N2418, 2N2419, 2N2420,  
2N2421, 2N2422  
2N2417A, 2N2418A, 2N2419A,  
2N2420A, 2N2421A, 2N2422A  
2N2417B, 2N2418B, 2N2419B,  
2N2420B, 2N2421B, 2N2422B  
VB2E = 60V  
-
-
-
-
-
-
2
2
Emitter reverse current  
(IB1 = 0)  
V
V
B2E = 60V  
B2E = 30V  
IEB2O  
µA  
0.2  
2N2417, 2N2418, 2N2419, 2N2420,  
2N2421, 2N2422  
2N2417A, 2N2418A, 2N2419A,  
2N2420A, 2N2421A, 2N2422A  
2N2417B, 2N2418B, 2N2419B,  
2N2420B, 2N2421B, 2N2422B  
-
-
-
-
-
-
12  
12  
6
Peak point emitter current  
(VB2B1 = 25V)  
IEB2O  
µA  
mA  
V
Valley point current  
IV  
8
-
-
(VB2B1 = 20V, RB2 = 100ohms)(2)  
2N2417, 2N2418, 2N2419, 2N2420,  
2N2421, 2N2422  
2N2417A, 2N2418A, 2N2419A,  
2N2420A, 2N2421A, 2N2422A  
2N2417B, 2N2418B, 2N2419B,  
2N2420B, 2N2421B, 2N2422B  
-
-
-
-
-
-
-
Base-one peak pulse voltage(3)  
VOB1  
3
3
Note 1: Intrinsic standoff voltage: η = VP-VF/VB2B1, where VP = peak point emitter voltage , VB2B1 = interbase voltage, VF = emitter to base one junction diode drop  
(0.45V @ 10µA).  
Note 2: PW 300µs, duty cycle 2% to avoid internal heating due to interbase modulation which may result in erroneous readings  
Note 3: Base one peak pulse voltage is used to ensure minimum pulse amplitude for applications in SCR firing circuits and other types of pulse circuits.  
phone +1.908.245-7200  
fax +1.908.245-0555  
sales@digitroncorp.com  
www.digitroncorp.com  
144 Market Street  
Kenilworth NJ 07033 USA  
Rev. 20121019  

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