生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.21 | 其他特性: | N-M, I/P POWER-MAX(PEAK)=250W |
标称衰减: | 30 dB | 特性阻抗: | 50 Ω |
构造: | COAXIAL | 最大输入功率 (CW): | 33.01 dBm |
JESD-609代码: | e4 | 最大工作频率: | 2500 MHz |
最小工作频率: | 最高工作温度: | 125 °C | |
最低工作温度: | -65 °C | 射频/微波设备类型: | FIXED ATTENUATOR |
端子面层: | GOLD | 最大电压驻波比: | 1.15 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3107 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N3107 | NJSEMI |
获取价格 |
SI NPN LO-PWR BJT MANUFACTURER | |
2N3107 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO39 | |
2N3107 | MICRO-ELECTRONICS |
获取价格 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | |
2N3107LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PI | |
2N3108 | COMSET |
获取价格 |
GENERAL PURPOSE AMPLIFIERS AND SWITCHES | |
2N3108 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N3108 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO39 | |
2N3108 | NJSEMI |
获取价格 |
GENERAL PURPOSE AMPLIFIER AND SWITCH | |
2N3108LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PI |