是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | Factory Lead Time: | 52 weeks |
风险等级: | 5.69 | 接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2EDL8013GXUMA1 | INFINEON |
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Buffer/Inverter Based Peripheral Driver, | |
2EDL8014GXUMA1 | INFINEON |
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暂无描述 | |
2EDL8023G3C | INFINEON |
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2EDL8023G3C is a high-side and low-side driver designed for advanced switching converters | |
2EDL8024G | INFINEON |
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EiceDRIVER™ 2EDL8024G 双通道结隔离式栅极驱动器 IC 专为半桥应用中 | |
2EDL8024G3C | INFINEON |
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2EDL8024G3C is a high-side and low-side driver designed for advanced switching converters | |
2EDL8033G3C | INFINEON |
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The 2EDL8033G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge | |
2EDL8033G4B | INFINEON |
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The 2EDL8033G4B is designed to drive both high-side and low-side MOSFETs in a half-bridge | |
2EDL8033G4C | INFINEON |
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The 2EDL8033G4C is designed to drive both high-side and low-side MOSFETs in a half-bridge | |
2EDL8034G3C | INFINEON |
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The 2EDL8034G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge | |
2EDL8034G4B | INFINEON |
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The 2EDL8034G4B is designed to drive both high-side and low-side MOSFETs in a half-bridge |