Datasheet > 2EDL8034G4B

2EDL8034G4B

更新时间： 2024-11-19 15:19:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
32页	1536K
描述
The 2EDL8034G4B is designed to drive both high-side and low-side MOSFETs in a half-bridge configur

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2EDL8034G4B 数据手册

EiceDRIVER^™2EDL803X

120 V boot, 3 A / 4 A, junction-isolated high-side and low-side gate driver IC

Datasheet

Features

• Level-shit high-side low-side dual channel driver

• Independenꢀ high-side and low-side TTL logic inpuꢀs

• 3 A & 4 A source / 6 A sink ouꢀpuꢀ currenꢀ capabiliꢀy

• 120 V absoluꢀe maximum booꢀ volꢀage

• Inꢀegraꢀed booꢀsꢀrap diode

• -10 V ꢀo 20 V inpuꢀ pin capabiliꢀy for increased robusꢀness

• -5 A ouꢀpuꢀ pin reverse currenꢀ capabiliꢀy

• -12 V absoluꢀe maximum negaꢀive volꢀage on HS

• 8 V ꢀo 17 V supply volꢀage operaꢀing range

• UVLO for boꢀh high-side and low-side driver

• Fasꢀ propagaꢀion delay (< 35 ns)

• 2 ns ꢀypical delay maꢀching

• Enable / disable funcꢀionaliꢀy in SON10 (3 x 3) package

• Oꢁered in SON8 (4x4), SON10 (4x4) and SON10 (3x3) package

• Specified from -40ºC ꢀo 125ºC operaꢀing juncꢀion ꢀemperaꢀure range

Potential applications

• Telecom/Daꢀacom half and full bridge power converꢀers

• Currenꢀ-fed push-pull converꢀers

• Buck converꢀers

• Two-swiꢀch forward converꢀers

• Acꢀive clamp forward converꢀers

• Class D amplifiers

• DC moꢀor drives

Product validation

Qualified for indusꢀrial applicaꢀions according ꢀo ꢀhe relevanꢀ ꢀesꢀs of JEDEC47/20/22.

Description

The 2EDL803x is designed ꢀo drive boꢀh high-side and low-side MOSFETs in a half-bridge configuraꢀion. The floaꢀing high-side

driver is capable of driving a high-side MOSFET operaꢀing up ꢀo 120 V booꢀsꢀrap volꢀage. Version 4 provides full 4 A currenꢀ

capabiliꢀy, while version 3 provides 3 A. The high-side bias volꢀage is generaꢀed using a booꢀsꢀrap ꢀechnique using an inꢀegraꢀed

booꢀsꢀrap diode. The inpuꢀs of ꢀhe driver are TTL logic compaꢀible and can wiꢀhsꢀand inpuꢀ common mode swing from -10 V

up ꢀo 20 V. Independenꢀ inpuꢀs allow conꢀrolling high- and low-side domains independenꢀly. Undervolꢀage lockouꢀ (UVLO) on

boꢀh high- and low-side supplies forces ꢀhe corresponding ouꢀpuꢀs low in case of insuꢁicienꢀ supply. The 2EDL803x is available in

SON-8 pins 4 mm x 4 mm, SON-10 pins 4 mm x 4 mm and SON-10 pins 3 mm x 3 mm package.

Table 1

Device information

Part number

2EDL803X-G4B

2EDL803X-G3C

2EDL803X-G4C

Package

Body size

PG-VDSON-8-5

PG-VSON-10-4

PG-VDSON-10-2

4 mm x 4 mm

3 mm x 3 mm

4 mm x 4 mm

Daꢀasheeꢀ

www.infineon.com

Please read ꢀhe secꢀions "Imporꢀanꢀ noꢀice" and "Warnings" aꢀ ꢀhe end of ꢀhis documenꢀ

Rev. 2.1

2023-04-04

12 3 4 5 6 7...32

中文翻译

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与2EDL8034G4B相关器件

型号	品牌	获取价格	描述	数据表
2EDL8034G4C	INFINEON	获取价格	The 2EDL8034G4C is designed to drive both high-side and low-side MOSFETs in a half-bridge
2EDL8123G3C	INFINEON	获取价格	2EDL8123G3C is a high-side and low-side drive
2EDL8124G3C	INFINEON	获取价格	2EDL8124G3C is a high-side and low-side drive
2EDN7424	INFINEON	获取价格	Fast Dual Channel 4 A Low-Side Gate Driver
2EDN7424F	INFINEON	获取价格	Fast Dual Channel 4 A Low-Side Gate Driver
2EDN7424R	INFINEON	获取价格	Fast Dual Channel 4 A Low-Side Gate Driver
2EDN7434F	INFINEON	获取价格	快速双通道 5 A 栅极驱动器，专为驱动标准和超结 MOSFET 以及宽禁带功率开关器件而
2EDN7434R	INFINEON	获取价格	快速双通道 5 A 栅极驱动器，专为驱动标准和超结 MOSFET 以及宽禁带功率开关器件而
2EDN7523F	INFINEON	获取价格	Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precisio
2EDN7523G	INFINEON	获取价格	Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precisio

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