Datasheet > 2ED21094S06J

2ED21094S06J

更新时间： 2022-05-14 22:20:34

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
26页	1671K
描述
650 V half bridge gate driver with integrated bootstrap diode

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2ED21094S06J 数据手册

2ED2109 (4) S06F (J)

650 V half bridge gate driver with integrated bootstrap diode

4.4

Dynamic electrical characteristics

V_CC= V_BS= 15 V, V_SS= COM, T_A= 25 ^oC and C_L= 1000 pF unless otherwise specified.

Table 6 Dynamic electrical characteristics

Symbol Definition

Min.

Typ.

740

200

100

—

540

Max. Units Test Conditions

1030

300

t_ONTurn-on propagation delay

t_OFFTurn-off propagation delay

—

350

tsd

t_R

Shut-down propagation delay

Turn-on rise time

300

150

V_IN= 0 V or 5 V

V_S= 0 V

t_F

Turn-off fall time

Delay matching time (HS & LS turn-on/off)

730

RDT = 0 Ω

RDT = 200 kΩ

RDT = 0

Dead time

—

MDT

Matching Dead time

600

RDT = 200 kΩ

Datasheet

www.infineon.com/soi

8 of 26

V 2.022

2020-07-02

1...5 6 789 10 11...26

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