Datasheet > 2ED21094S06J

2ED21094S06J

更新时间： 2022-05-14 22:20:34

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
26页	1671K
描述
650 V half bridge gate driver with integrated bootstrap diode

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2ED21094S06J 数据手册

2ED2109 (4) S06F (J)

650 V half bridge gate driver with integrated bootstrap diode

Application information and additional details

5.1

IGBT / MOSFET gate drive

The 2ED2109 (4) S06F (J) HVIC is designed to drive MOSFET or IGBT power devices. Figure 4 and Figure 5 illustrate

several parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used

to drive the gate of the power switch, is defined as I_O. The voltage that drives the gate of the external power switch

is defined as V_HOfor the high-side power switch and V_LOfor the low-side power switch; this parameter is

sometimes generically called V_OUTand in this case does not differentiate between the high-side or low-side output

voltage.

Figure 4

HVIC Sourcing current

Figure 5

HVIC Sinking current

5.2

Switching and timing relationships

The relationships between the input and output signals of the 2ED2109 (4) S06F (J) are illustrated below in

Figure 6 and Figure 7. From these figures, we can see the definitions of several timing parameters (i.e. t_ON, t_OFF

t_R, and t_F) associated with this device.

Figure 6

Switching timing diagram

Figure 7

Input/output logic diagram

Datasheet

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型号	品牌	描述	获取价格	数据表
2ED21094S06JXUMA1	INFINEON	Half Bridge Based Peripheral Driver,	获取价格
2ED2109S06F	INFINEON	650 V half bridge gate driver with integrated bootstrap diode	获取价格
2ED2110S06M	INFINEON	650 V high speed, high current high-side and	获取价格
2ED21814S06J	INFINEON	650 V high-side and low-side gate driver with integrated bootstrap diode	获取价格
2ED21814S06JXUMA1	INFINEON	Half Bridge Based Peripheral Driver,	获取价格
2ED2181S06F	INFINEON	650 V high-side and low-side gate driver with integrated bootstrap diode	获取价格