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2ED21094S06J PDF预览

2ED21094S06J

更新时间: 2022-05-14 22:20:34
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
26页 1671K
描述
650 V half bridge gate driver with integrated bootstrap diode

2ED21094S06J 数据手册

 浏览型号2ED21094S06J的Datasheet PDF文件第20页浏览型号2ED21094S06J的Datasheet PDF文件第21页浏览型号2ED21094S06J的Datasheet PDF文件第22页浏览型号2ED21094S06J的Datasheet PDF文件第23页浏览型号2ED21094S06J的Datasheet PDF文件第24页浏览型号2ED21094S06J的Datasheet PDF文件第25页 
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IMPORTANT NOTICE  
Edition 2020-07-02  
The information given in this document shall in no For further information on the product, technology,  
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please  
Published by  
characteristics (“Beschaffenheitsgarantie”) .  
contact your nearest Infineon Technologies office  
(www.infineon.com).  
Infineon Technologies AG  
81726 Munich, Germany  
With respect to any examples, hints or any typical  
values stated herein and/or any information  
regarding the application of the product, Infineon  
Technologies hereby disclaims any and all  
warranties and liabilities of any kind, including  
without limitation warranties of non-infringement of  
intellectual property rights of any third party.  
WARNINGS  
Due to technical requirements products may contain  
dangerous substances. For information on the types  
in question please contact your nearest Infineon  
Technologies office.  
© 2020 Infineon Technologies AG.  
All Rights Reserved.  
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Document reference  
The data contained in this document is exclusively  
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