Datasheet > 2ED24427N01F

2ED24427N01F

更新时间： 2023-09-03 20:39:33

品牌	Logo	应用领域
英飞凌 - INFINEON		PC 驱动双极性晶体管
页数	文件大小	规格书
21页	1267K
描述
EiceDRIVER™ 24 V dual-channel low-side non-inverting gate driver for MOSFETs or IGBTs with typical 10 A source and sink currents in a DSO-8 package with thermally efficient, exposed power pad. 2ED24427N01F enables higher power and faster switching frequencies in multiple applications with a reduced PCB footprint and increased reliability by simplifying high power density system design.

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2ED24427N01F 数据手册

2ED24427N01F

10 A dual-channel low-side gate driver IC

Features

Product summary



10 A sink and 10 A source driver capability

11.5 V under voltage lockout

24 V maximum supply voltage

Enable function

CMOS Schmitt-triggered inputs

Output in phase with input

3.3 V, 5 V and 15 V input logic compatible

2 kV ESD HBM

V_CC= 12.5 V to 24 V

I_o+pk/ I_{o- pk}(typ.) =+ 10 A/ - 10 A

t_ON/ t_OFF(max.) = 40 ns/ 55 ns

Package

RoHS compliant

Potential applications

Driving high current IGBTs, enhancement mode N-Channel MOSFETs

directly or through a gate drive transformer in various power electronic

applications in single or parallel combinations

Power Pad DSO-8

Typical Infineon recommendations are as below:

Electric vehicle (EV) charging stations and battery management systems

DC-DC converters

Industrial Drives

Industrial SMPS

Motor control

Industrial applications

General purpose low-side gate driver



Product validation

Qualified for industrial applications according to the relevant tests of JEDEC JESD47/22 and J-STD-020.

Ordering information

Standard pack

Form

Base part number

Package type

Orderable part number

Quantity

2ED24427N01F

PG-DSO-8-900

Tape and Reel

2500

2ED24427N01FXUMA1

Datasheet

www.infineon.com/gdLowSide

Please read the Important Notice and Warnings at the end of this document

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