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2ED24427N01F PDF预览

2ED24427N01F

更新时间: 2023-09-03 20:39:33
品牌 Logo 应用领域
英飞凌 - INFINEON PC驱动双极性晶体管
页数 文件大小 规格书
21页 1267K
描述
EiceDRIVER™ 24 V dual-channel low-side non-inverting gate driver for MOSFETs or IGBTs with typical 10 A source and sink currents in a DSO-8 package with thermally efficient, exposed power pad. 2ED24427N01F enables higher power and faster switching frequencies in multiple applications with a reduced PCB footprint and increased reliability by simplifying high power density system design.

2ED24427N01F 数据手册

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2ED24427N01F  
10 A dual-channel low-side gate driver IC  
Description  
The 2ED24427N01F is a low-voltage, power MOSFET and IGBT non-inverting gate driver. Proprietary latch  
immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with  
standard CMOS or LSTTL output. The output driver features a current buffer stage. The output drivers feature a  
high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays between  
two channels are matched. Internal circuitry on VCC pin provides an under voltage lockout protection that  
holds output low until Vcc supply voltage is within operating range.  
* This diagram shows electrical connections only. Please refer to our application notes and design tips for proper circuit board layout.  
Figure 1  
Typical application block diagram  
Datasheet  
www.infineon.com/gdLowSide  
2 of 21  
V 2.0  
2019-11-10  

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