Datasheet > 2ED4820-EM

2ED4820-EM

更新时间： 2024-09-18 11:14:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
45页	1213K
描述
48 V smart high-side MOSFET gate driver with SPI for automotive applications

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中文翻译

获取价格

数据手册

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2ED4820-EM 数据手册

EiceDRIVER^™APD 2ED4820-EM

48 V smart high-side MOSFET gate driver with SPI

Features

•

Extended supply voltage range: 20 - 70 V

Two independent high-side gate driver outputs

1 A pull down, 0.3 A pull up for fast switch oﬀ/on

Device control, configuration and diagnostic via SPI

Low supply current in sleep mode I_{BAT_Q}< 5 µA

Supports back-to-back MOSFET topologies (common drain

and common source)

•

One bidirectional high or low-side analog current sense

interface with configurable gain

•

Configurable overcurrent/short circuit protection

Gate undervoltage lock-out

Safe state mode (both channels OFF) activated by direct

input pin

Package

Marking

PG-TSDSO-24

2ED4820-EM

•

Ground loss detection

Potential applications

•

48 V battery protection switch

48 V input protection switch for DCDC converters, motor control unit etc.

48 V relay and fuse replacement

C_VBAT

Low

Ohmic

Path

C_VCP

C_CPHL

CPL

5V or

3.3V

VBAT VCP CPH

R_G

VDD

C_VDD

R_GS

2ED4820-EM

MCU

R_Prot

GPIO

CSN

SCLK

MOSI

MISO

Capacitor

Pre-Charge

Path

48V

Battery

cells

R_G

INTERRUPT

ENABLE

SAFESTATEN

R_GS

ADC

CSO

R_FiltCSO

C_FiltCSO

R_PreCh

R_FiltSh

C_FiltSh

R_FiltSh

ISN

ISP

Shunt

Freewheel.

diode

LOAD(s)

AGND

GND EP

CPGND

Figure 1

48 V battery main switch application diagram

Product validation

Qualified for automotive applications. Product validation according to AEC-Q100 grade 1.

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Rev. 1.10

2022-12-20

12 3 4 5 6 7...45

中文翻译

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