Datasheet > 2C3019

2C3019

更新时间： 2024-09-15 22:11:35

品牌	Logo	应用领域
SEMICOA		晶体晶体管开关
页数	文件大小	规格书
1页	33K
描述
Chip Type 2C3019 Geometry 4500 Polarity PNP

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中文翻译

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技术参数
数据手册

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2C3019 技术参数

生命周期：	Transferred	零件包装代码：	DIE
包装说明：	UNCASED CHIP, S-XUUC-N2	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.55
Is Samacsys：	N	配置：	SINGLE
最小直流电流增益 (hFE)：	100	JESD-30 代码：	S-XUUC-N2
元件数量：	1	端子数量：	2
封装主体材料：	UNSPECIFIED	封装形状：	SQUARE
封装形式：	UNCASED CHIP	极性/信道类型：	PNP
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2C3019 数据手册

Data Sheet No. 2C3019

Ge ne ric Pa c ka ge d Pa rts :

2N3019, 2N3057

Chip Type 2C3019

Geometry 4500

Polarity PNP

Chip type 2C3019 by Semicoa Semi-

conductors provides performance

similar to these devices.

Product Summary:

APPLICATIONS: Designed for general

purpose switching and amplifier applica-

tions.

Part Numbers:

2N3019, 2N3019S, 2N3019UB, 2N3057, 2N3057A,

2N3700, 2N3700UB, SD3019F, SQ3019, SQ3019F

Features: Radiation graphs available

Mechanical Specifications

Top

Al - 12 kÅ min.

Au - 6.5 kÅ nom.

2.3 mils x 7.0 mils

5.0 mils x 11.0 mils

Metallization

Backside

Emitter

Base

Bonding Pad Size

8 mils nominal

Die Thickness

Chip Area

30 mils x 30 mils

Silox Passivated

Top Surface

Electrical Characteristics

T_A= 25^oC

Parameter

BV_CBO

Test conditions

Min

140

7.0

Max

---

Unit

V dc

I_C= 100 µA, I_E= 0

I_E= 100 µA, I_C= 0

V_CB= 40 V, I_E= 0

BV_EBO

I_CBO

---

h_FE

I_C= 150 mA dc, V_CE= 10 V

100

300

---

Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less

than 300 µs, duty cycle less than 2%.

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