Datasheet > 2C3762

2C3762

更新时间： 2024-11-25 23:19:39

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
1页	37K
描述
BJT

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数据手册

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2C3762 数据手册

Data Sheet No. 2C3762

Ge ne ric Pa c ka ge d Pa rts :

Chip Type 2C3762

Geometry 6706

Polarity PNP

2N3467, 2N3467L, 2N3468,

2N3468L, 2N3762, 2N3762L,

2N3763, 2N3763L, 2N3764, 2N3765

30 MILS

Chip type 2C3762 by Semicoa Semi-

conductors provides performance

similar to these devices.

Product Summary:

APPLICATIONS: Designed for general

purpose switching and amplifier applica-

tions.

Part Numbers:

2N3467, 2N3467L, 2N3468, 2N3468L,

2N3762, 2N3762L, 2N3763, 2N3763L,

2N3764, 2N3765

Features: Radiation graphs available

Mechanical Specifications

Top

Al - 20 kÅ min.

Au - 6.5 kÅ nom.

5.0 mils x 5.0 mils

Metallization

Backside

Emitter

Base

Bonding Pad Size

8 mils nominal

Die Thickness

Chip Area

30 mils x 30 mils

Silox Passivated

Top Surface

Electrical Characteristics

T_A= 25^oC

Parameter

BV_CBO

Test conditions

Min

140

7.0

Max

---

Unit

V dc

I_C= 100 µA, I_E= 0

I_E= 100 µA, I_C= 0

V_CB= 40 V, I_E= 0

BV_EBO

I_CBO

---

h_FE

I_C= 150 mA dc, V_CE= 10 V

100

300

---

Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less

than 300 µs, duty cycle less than 2%.

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