2SK3919

更新时间： 2024-02-04 08:39:19

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	167K
描述
SWITCHING N-CHANNEL POWER MOSFET

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数据手册

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2SK3919 数据手册

2SK3919

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

10000

iss

^GS= 10 V

1000

100

oss

^GS= 0 V

I = 32 A

rss

f = 1 MHz

Pulsed

0.01

0.1

100

-100

-50

100

150

200

V^DS- Drain to Source Voltage - V

T^ch- Channel Temperature - °C

SWITCHING CHARACTERISTICS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

1000

100

I = 64 A, 42 A (at V^DD= 5 V)

^DD= 20 V

12.5 V

5 V

d(off)

d(on)

^DD= 12.5 V

^GS= 10 V

= 10 Ω

0.1

100

I^D- Drain Current - A

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

1000

100

1000

100

di/dt = 100 A/µs

^GS= 10 V

^GS= 0 V

0 V

0.1

0.01

Pulsed

1.5

0.5

I^F- Diode Forward Current - A

100

VF(S-D) - Source to Drain Voltage - V

Data Sheet D17078EJ4V0DS

1 2 3 456 7 8

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