2SK3924-01L,S,SJ
N-CHANNEL SILICON POWER MOSFET
200406
Outline Drawings (mm)
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
See to P4
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Symbol
Ratings
250
Unit
V
Remarks
Drain(D)
Drain-source voltage
VDS
VDSX
ID
220
V
VGS=-30V
Continuous Drain Current
Pulsed Drain Current
14
A
ID(puls]
VGS
IAR
±56
A
Gate-Source Voltage
±30
V
Gate(G)
Maximum Avalanche current
Non-Repetitive
14
A
Note *1
Note *2
Source(S)
EAS
301.1
mJ
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
=
Maximum Avalanche Energy
Repetitive
Note *2:StartingTch=25°C,IAS=6A,L=14.1mH,
EAR
10.5
mJ
Note *3
VCC=48V,RG=50Ω
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Max. Power Dissipation
EAS limited by maximum channel temperature
and Avalanche current.
dVDS/dt
dV/dt
-di/dt
PD
20
5
kV/µs
<
VDS 250V
=
kV/µs Note *4
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
100
105
1.67
+150
Note *5
A/µs
W
Tc=25°C
Ta=25°C
Operating and Storage
Temperature range
Tch
°C
Tstg
-55 to +150 °C
<
<
<
Note *4:IF -ID, -di/dt=100A/µs,VCC BVDSS,Tch 150°C
=
<
=
=
<
<
Note *5:IF -ID, dv/dt=5kV/µs,VCC BVDSS,Tch 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
=
=
=
Max. Units
V
Min.
Typ.
Symbol
BVDSS
VGS(th)
Item
Test Conditions
µ
Drain-Source Breakdown Voltage
Gate Threshold Voltage
ID= 250 A
VGS=0V
VDS=VGS
250
3.0
µ
V
ID= 250 A
5.0
25
2.0
100
280
µA
mA
nA
Tch=25°C
VDS=250V VGS=0V
Zero Gate Voltage Drain Current
IDSS
Tch=125°C
VDS=200V VGS=0V
VGS=±30V
VDS=0V
ID=7A VGS=10V
IGSS
RDS(on)
gfs
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
220
10
mΩ
S
5
ID=7A VDS=25V
VDS=75V
Ciss
Coss
Crss
td(on)
tr
780
90
1170
135
pF
Output Capacitance
VGS=0V
6.0
9.0
18
4.5
Reverse Transfer Capacitance
Turn-On Time ton
f=1MH
ns
12
3
VCC=48V ID=7A
VGS=10V
23
6
35
9
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
22
33
11
QG
nC
Total Gate Charge
VCC=125V
ID=14A
7.0
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
6.0
9.0
1.50
250
1.25
VGS=10V
1.00
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=14A VGS=0V Tch=25°C
IF=14A VGS=0V
-di/dt=100A/µs
Tch=25°C
120
0.5
trr
Qrr
ns
µC
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
1.191 °C/W
Thermal resistance
°C/W
75
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