2SK3919

更新时间： 2024-02-25 11:10:06

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	167K
描述
SWITCHING N-CHANNEL POWER MOSFET

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数据手册

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2SK3919 数据手册

2SK3919

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

Zero Gate Voltage Drain Current

Gate Leakage Current

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

µA

IDSS

VDS = 25 V, VGS = 0 V

±100

3.0

IGSS

VGS = ±20 V, VDS = 0 V

VDS = 10 V, ID = 1 mA

VDS = 10 V, ID = 16 A

VGS = 10 V, ID = 32 A

VGS = 5.0 V, ID = 16 A

Gate Cut-off Voltage

VGS(off)

| y^fs|

RDS(on)1

R^DS(on)2

Ciss

2.0

9.7

2.5

Note

Forward Transfer Admittance

Note

Drain to Source On-state Resistance

4.5

6.8

2050

460

330

5.6

mΩ

13.7

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

V^DS= 10 V

VGS = 0 V

f = 1 MHz

Coss

Crss

td(on)

V^DD= 12.5 V, ID = 32 A

VGS = 10 V

R^G= 10 Ω

Turn-off Delay Time

Fall Time

td(off)

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

V^DD= 20 V

VGS = 10 V

ID = 64 A

QGS

QGD

V^F(S-D)

trr

Note

Body Diode Forward Voltage

IF = 64 A, VGS = 0 V

di/dt = 100 A/µs

0.97

Reverse Recovery Time

Reverse Recovery Charge

Note Pulsed

Qrr

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

= 25 Ω

90%

Wave Form

VGS

10%

PG.

GS = 20 → 0 V

PG.

50 Ω

VDS

90%

BVDSS

10% 10%

Wave Form

td(on)

td(off)

VDD

ton

toff

τ = 1 µs

Duty Cycle ≤ 1%

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

= 2 mA

PG.

50 Ω

Data Sheet D17078EJ4V0DS

123 4 5 6 7 8

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