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2SB1132 PDF预览

2SB1132

更新时间: 2024-11-14 18:09:07
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
4页 576K
描述
SOT-89

2SB1132 数据手册

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2SB1132  
BIPOLAR TRANSISTOR (PNP)  
FEATURES  
Complementary to 2SD1664  
Low VCE(sat)  
Surface Mount device  
SOT-89  
MECHANICAL DATA  
Case: SOT-89  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.055 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
Collector-Base Voltage  
-40  
-32  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-5  
V
Collector Current  
-1  
A
PW=100ms)  
Pulsed Collector Current(Single pulse ,  
ICP  
-2  
A
Collector Power Dissipation  
PC  
500  
mW  
°C  
°C  
Junction Temperature  
TJ  
150  
Storage Temperature  
TSTG  
-55 ~+150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol Min Typ Max Unit  
Conditions  
IC=-50uAIE=0  
I =-1mA I =0  
V(BR)CBO  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
-40  
-32  
-5  
V
V
V(BR)CEO  
V(BR)EBO  
ICBO  
C
B
V
I =-50uA I =0  
E C  
VCB=-20V, IE=0  
VEB=-4V, IC=0  
-0.5  
-0.5  
uA  
uA  
Emitter cut-off current  
IEBO  
DC current gain  
hFE  
82  
390  
VCE=-3V, IC=-100mA  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
-0.2 -0.5  
150  
V
IC=-500mAIB=-50mA  
VCE=-5V,IC=-50mA,f=30  
VCB=-10V, IE=0, f=1  
MHz  
pF  
MHz  
Collector output capacitance  
Cob  
20  
30  
MHz  
CLASSIFICATION OF hFE  
Rank  
P
Q
R
Range  
80-180  
BAP  
120-270  
BAQ  
180-390  
BAR  
Marking  
1 / 4  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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