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2N7002E PDF预览

2N7002E

更新时间： 2025-07-29 06:23:27

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管场效应晶体管开关光电二极管
页数	文件大小	规格书
1页	45K
描述
N-Channel Enhanceent Mode Field Effect Transistor

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中文翻译

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数据手册

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2N7002E 数据手册

SMD Type

MOSFET

N-Channel Enhanceent Mode

Field Effect Transistor

2N7002E

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

3

Features

Low On-Resistance: RDS(ON)

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

1

2

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

1 GATE

2.Emitter

2 SOURCE

3.collector

3 DRAIN

Absolute Maximum Ratings Ta=25

Parameter

Symbol

VDSS

Rating

Unit

V

Drain-Source Voltage

60

60

VDGR

V

Drain-Gate Voltage

RGS

1.0 m

Gate-Source Voltage -Continuous

Pulsed

20

VGSS

V

40

Drain Current -Continuous

Power Dissipation

ID

240

mA

mW

W

PD

300

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

R

JA

417

Tj, TSTG

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VGS = 0V, ID = 10

Min

Typ

70

Max

Unit

V

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @ TC = 25

@ TC = 125

VDSS

60

A

1.0

500

10

2.5

3

IDSS

VDS = 60V, VGS = 0V

A

Gate-Body Leakage

IGSS

nA

V

VGS = 15V, VDS = 0V

VDS = VGS, ID = 250mA

VGS = 10V, ID = 250mA

VGS = 4.5V, ID = 200mA

VGS = 10V, VDS = 7.5V

VDS =10V, ID = 0.2A

Gate Threshold Voltage

VGS(th)

1.0

1.6

2.0

1.0

RDS (ON)

Static Drain-Source On-Resistance @ Tj = 25

4

On-State Drain Current

Forward Transconductance

Input Capacitance

ID(ON)

gFS

0.8

80

A

mS

pF

pF

pF

Ciss

22

11

50

25

VDS = 25V, VGS = 0V,f = 1.0MHz

Output Capacitance

Coss

Crss

Reverse Transfer Capacitance

2.0

5.0

Turn-On Delay Time

Turn-Off Delay Time

tD(ON)

7.0

11

20

20

ns

ns

VDD = 30V, ID = 0.2A,RL = 150 ,VGEN

= 10V,RGEN = 25

tD(OFF)

Marking

Marking

K7B

1

www.kexin.com.cn

1

中文翻译

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与2N7002E相关器件

型号	品牌	获取价格	描述	数据表
2N7002E,215	NEXPERIA	获取价格	元器件封装:TO-236AB;
2N7002E-13	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
2N7002E-13-F	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
2N7002E-7	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
2N7002E-7-F	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002E-7-G	DIODES	获取价格
2N7002E-H	FORMOSA	获取价格	Status : Active; Package : SOT-23; ESD : Yes; BVDSS(V) : 60; ID(A) : 0.3; PD(W) : 0.35; ID
2N7002E-T1-E3	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
2N7002E-T1-GE3	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
2N7002E8/10K	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 115MA I(D) \| TO-236AB

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