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2N3740A PDF预览

2N3740A

更新时间: 2024-10-13 22:49:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
3页 65K
描述
Medium Power PNP Transistors

2N3740A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.03其他特性:HIGH RELIABILITY
最大集电极电流 (IC):4 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-66JESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

2N3740A 数据手册

 浏览型号2N3740A的Datasheet PDF文件第2页浏览型号2N3740A的Datasheet PDF文件第3页 
7516 Central Industrial Drive  
Riviera Beach, Florida  
33404  
PHONE: (561) 842-0305  
FAX: (561) 845-7813  
2N3740A  
APPLICATIONS:  
·
·
·
Drivers  
Switches  
Medium-Power Amplifiers  
FEATURES:  
Medium Power  
PNP Transistors  
·
·
·
·
Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp  
High Gain Characteristics: hFE @ IC = 250 mA: 30-100  
Excellent Safe Area Limits  
Low Collector Cutoff Current: 100 nA (Max) 2N3740A  
DESCRIPTION:  
These power transistors are produced by PPC's DOUBLE  
DIFFUSED PLANAR process. This technology produces high  
voltage devices with excellent switching speeds, frequency  
response, gain linearity, saturation voltages, high current gain,  
and safe operating areas. They are intended for use in  
Commercial, Industrial, and Military power switching, amplifier,  
and regulator applications.  
Ultrasonically bonded leads and controlled die mount  
techniques are utilized to further increase the SOA capability  
and inherent reliability of these devices. The temperature  
range to 200°C permits reliable operation in high ambients, and  
the hermetically sealed package insures maximum reliability  
and long life.  
TO-66  
ABSOLUTE MAXIMUM RATINGS:  
SYMBOL  
CHARACTERISTIC  
VALUE  
UNITS  
Vdc  
Vdc  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
7.0  
V
CEO  
*
V *  
EB  
Collector-Base Voltage  
Peak Collector Current  
Continuous Collector Current  
Base Current  
60  
Vdc  
V *  
CB  
10  
4.0  
Adc  
Adc  
Adc  
I *  
C
I *  
C
2.0  
I *  
B
Storage Temperature  
Operating Junction Temperature  
Total Device Dissipation  
-65 to 200  
-65 to 200  
25  
°C  
°C  
Watts  
T
T *  
P *  
*
STG  
J
D
T = 25°C  
C
0.143  
7
W/°C  
°C/W  
Derate above 25°C  
Thermal Impedance  
q JC  
* Indicates JEDEC registered data.  
MSC1040.PDF 03-12-99  

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