5秒后页面跳转
2731-115M PDF预览

2731-115M

更新时间: 2024-09-16 14:50:31
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 95K
描述
Transistor

2731-115M 技术参数

生命周期:Obsolete包装说明:,
针数:2Reach Compliance Code:compliant
风险等级:5.84Base Number Matches:1

2731-115M 数据手册

 浏览型号2731-115M的Datasheet PDF文件第2页浏览型号2731-115M的Datasheet PDF文件第3页浏览型号2731-115M的Datasheet PDF文件第4页 
2731-115MR1  
2731-115M  
115 Watts, 36 Volts, 200µs, 10%  
Radar 2700-3100 MHz  
Preliminary Data  
GENERAL DESCRIPTION  
CASE OUTLINE  
55KS-1  
Common Base  
The 2731-115M is an internally matched, COMMON BASE bipolar transistor  
capable of providing 115 Watts of pulsed RF output power at 200µs pulse  
width, 10% duty factor across the 2700 to 3100 MHz band. The transistor  
prematch and test fixture has been optimized through the use of 10 Ohm  
TRL Analysis. This ceramic sealed transistor is specifically designed for S-  
band radar applications. It utilizes gold metallization and emitter ballasting to  
provide high reliability and supreme ruggedness.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation  
Device Dissipation @ 25°C1  
575 W  
Maximum Voltage and Current  
Collector to Base Voltage (BV )  
65 V  
3.0 V  
15.0 A  
ces  
Emitter to Base Voltage (BVebo  
Collector Current (Ic)  
)
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
-65 to +200 °C  
+200 °C  
ELECTRICAL CHARACTERISTICS @ 25°C  
SYMBOL CHARACTERISTICS  
TEST CONDITIONS  
MIN TYP MAX UNITS  
Pout  
Pin  
Pg  
Power Output  
Power Input  
F=2700-3100 MHz  
115  
120  
W
W
dB  
%
V = 36 Volts  
cc  
17  
Power Gain  
Pulse Width = 200 µs  
Duty Factor = 10 %  
8.2  
40  
8.5  
50  
Collector Efficiency  
hc  
Rl  
Return Loss  
7
dB  
dB  
nS  
Pd  
Pulse Droop  
0.6  
100  
2:1  
tr  
Rise Time  
Load Mismatch Tolerance1  
VSWR  
F = 3100 MHz, Po = 110W  
l
FUNCTIONAL CHARACTERISTICS @ 25°C  
BV Emitter to Base Breakdown Ie = 30 mA  
Collector to Emitter Breakdown Ic = 120 mA  
3.0  
63  
V
V
ebo  
BV  
ces  
hFE  
qjc1  
DC – Current Gain  
Thermal Resistance  
Vce = 5V, Ic = 600 mA  
18  
60  
0.3  
°C/W  
NOTE: 1. At rated output power and pulse conditions  
Issue April 2005  
Advanced Power Technology reserves the right to change, without notice, the specifications and information  
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.  

与2731-115M相关器件

型号 品牌 获取价格 描述 数据表
2731-20 MICROSEMI

获取价格

20Watts, 36 Volts, 100us, 10% Radar 2700-3100 MHz
2731-200P MICROSEMI

获取价格

200 Watts - 200μs, 10%, 36V S-Band Pulsed Rad
273159-006 INTEL

获取价格

80960JA/JF/JD/JS/JC/JT 3.3 V Embedded 32-Bit Microprocessor
2731-A-2510-A-000500 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Male, Plug, ROHS COMPLIANT
2731-A-2510-A-001000 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Male, Plug, ROHS COMPLIANT
2731-A-2510-A-002500 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Male, Plug, ROHS COMPLIANT
2731-A-2510-A-003000 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Male, Plug, ROHS COMPLIANT
2731-A-2510-B-005000 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Male, Plug, ROHS COMPLIANT
2731-A-2511-A-000500 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Male, Plug, ROHS COMPLIANT
2731-A-2511-A-002500 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Male, Plug, ROHS COMPLIANT