Datasheet > 2731-20

2731-20

更新时间： 2024-11-09 07:38:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		雷达
页数	文件大小	规格书
3页	63K
描述
20Watts, 36 Volts, 100us, 10% Radar 2700-3100 MHz

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2731-20 数据手册

2731-20R1

2731-20

20Watts, 36 Volts, 100us, 10%

Radar 2700-3100 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55KCR-1

Common Base

The 2731-20is an internally matched, COMMON BASE bipolar transistor

capable of providing 20Watts of pulsed RF output power at 100 pulse width,

10% duty factor across the 2700 to 3100 MHz band. The transistor prematch

and test fixture has been optimized through the use of 10 Ohm TRL Analysis.

This ceramic sealed transistor is specifically designed for S-band radar

applications. It utilizes gold metallization and emitter ballasting to provide high

reliability and supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25°C¹

70 W

Maximum Voltage and Current

Collector to Base Voltage (BV_ces)

65 V

3.0 V

1.85 A

Emitter to Base Voltage (BV_ebo

Peak Collector Current (I_c)

)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

-65 to +200 °C

+200 °C

ELECTRICAL CHARACTERISTICS @ 25°C

SYMBOL CHARACTERISTICS

TEST CONDITIONS

MIN TYP MAX UNITS

P_out

Power Output

F=2700-3100 MHz

Pulse Width = 100s

Duty Factor = 10 %

Power Input = 3W

Vcc = +36V

8.2

-7

P_g

Power Gain

Collector Efficiency

Return Loss

η_c

R_l

VSWR-S

VSWR-T

Load Mismatch Stability

Load Mismatch Tolerance

1.5:1

3:1

F = 2700, 2900, 3100 MHz

FUNCTIONAL CHARACTERISTICS @ 25°C

Ices

Collector to Emitter Leakage

Vce=40V

1.5

2.5

BV_ces

θjc¹

Collector to Emitter Breakdown Ic = 10 mA

Thermal Resistance

°C/W

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit

our web site at www.microsemi.com or contact our factory direct.

12 3

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